Samsung’s new 5G multi-chip combines DRAM, NAND into one package

Samsung Electronics Co. has unveiled a new multi-chip that integrates high-performance DRAM and NAND flash memory chips into a single compact package for use in 5G smartphones.

The world’s top memory chipmaker said on Tuesday that it has begun mass producing low-power double data rate 5 (LPDDR5) universal flash storage (UFS)-based multi-chip package (uMCP), targeting the mid- to high-end smartphone market.

The chip package measures only 11.5 mm in width and 13mm in length, enhancing space and design efficiency for smartphone makers, it said.

Samsung will offer various storage capacity options to meet the diverse needs of customers, with DRAM ranging from 6 GB to 12 GB and NAND flash ranging from 128 GB to 512 GB.

Samsung, also the world’s largest maker of smartphones, said it has completed compatibility testing of the new chip with several global smartphone makers, and expects its uMCP-equipped devices to hit markets starting this month.

“Samsung’s new LPDDR5 uMCP is built upon our rich legacy of memory advancements and packaging know-how, enabling consumers to enjoy uninterrupted streaming, gaming and mixed reality experiences even in lower-tier devices,” Sohn Young-soo, vice president of Samsung’s memory product planning team, said in a statement.

“As 5G-compatible devices become more mainstream, we anticipate that our latest multi-chip package innovation will accelerate the market transition to 5G and beyond, and help to bring the metaverse into our everyday lives a lot faster.”

Write to Hyung-Suk Song at click@hankyung.com
In-Soo Nam edited this article.